Highly strained InGaAsP films with high critical thicknesses

Journal of Applied Physics

Volumn 79, Issue 10, 1996, Pages 7636-7639

  Bolkhovityanov, Yu B ^a   Jaroshevich, A S ^a   Nomerotsky, N V ^a   Revenko, M A ^a   Trukhanov, E M ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244257366     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362426     Document Type: Article

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