Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1416-1421

  Godlewski, M ^a   Holtz, P O ^b   Bergman, J P ^b   Monemar, B ^b   Reginski K ^c   Bugajski, M ^c   Goldys, E M ^d   Tansley, T L ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b LINKÖPING UNIVERSITY   (Sweden)

^c Research Group of Integrated Circuits and System Design   (Poland)

^d MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244254797     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/014     Document Type: Article

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