Modeling and high temperature characterization of SiC-JFET

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2008, Pages 3111-3117

  Mousa, R ^a   Planson, D ^a   Morel, H ^a   Allard, B ^a   Raynaud, C ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CIRCUIT SIMULATION; NONMETALS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDE;

ANALYTICAL MODELLING; CAPACITANCE-VOLTAGE; CHARACTERISTIC MEASUREMENTS; CURRENT-VOLTAGE; CURVE TRACERS; HIGH TEMPERATURE; IMPEDANCE ANALYZERS; INDUCTIVE LOADS; MEASURED DATA; PHYSICAL CHANNELS; POWER SWITCHING DEVICES; SI DEVICES; SIC DEVICES; SILICON CARBIDE (SIC); SIMULATION MODELLING; STEADY STATES; SWITCHING CHARACTERISTICS; TRANSIENT CHARACTERISTICS; WIDE-BAND GAP SEMICONDUCTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 52349104007     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2008.4592430     Document Type: Conference Paper

References (11)

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