Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET

2008 IEEE Workshop on Microelectronics and Electron Devices, WMED

Volumn , Issue , 2008, Pages 9-11

  Ananthan, Venkat ^a   Yang, Rongsheng ^a   Mouli, Chandra ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

Cylindrical MOSFET; Recessed gate MOSFET; Threshold voltage

Indexed keywords

ANALYTICAL CALCULATIONS; APPROXIMATE EXPRESSIONS; CYLINDRICAL MOSFET; DRIVE CURRENTS; RECESSED GATE MOSFET; TCAD SIMULATIONS;

DRAIN CURRENT; ELECTRON DEVICES; ELECTRONICS INDUSTRY; MICROELECTRONICS; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 52349092225     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WMED.2008.4510655     Document Type: Conference Paper

References (4)

1. K. Natori, I. Sasaki and F. Masuoka, "An Analysis of the Concave MOSFET", TED vol 25 no4 Apr 1978, pp 448-456
2. J.Y. Kim et. al, "S-RCAT Technology for 70nm DRAM feature size and beyond", VLSI Symposium 2005, pp34-35
3. Y. Okumura et. al, "A Novel Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET for High Current Drivability and Threshold Voltage Controllability", IEDM 1990 pp391-394
4. S.M. Sze, "Physics of Semiconductor Devices", Wiley-Interscience; 2 edition (September 1981)