Impact of Al in Cu alloy interconnects on electro and stress migration reliabilities

Microelectronic Engineering

Volumn 85, Issue 10, 2008, Pages 2137-2141

  Maekawa, Kazuyoshi ^a   Mori, Kenichi ^a   Suzumura, Naohito ^a   Honda, Kazuhito ^a   Hirose, Yukinori ^a   Asai, Koyu ^a   Uedono, Akira ^b   Kojima, Masayuki ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Copper interconnects; CuAl; Positron annihilation; Reliability

Indexed keywords

ACTIVATION ENERGY; AGRICULTURAL PRODUCTS; ALLOYS; ALUMINUM; ANNEALING; ATOMIC PHYSICS; ATOMS; COPPER ALLOYS; CRYSTAL GROWTH; ELECTROMIGRATION; FOOD ADDITIVES; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETRY; METALLIC FILMS; METALLIZING; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; POSITRONS; RECRYSTALLIZATION (METALLURGY); SCANNING; SECONDARY ION MASS SPECTROMETRY; SEED; SEMICONDUCTOR DOPING; VACANCIES;

COPPER INTERCONNECTS; CU ALLOY; CU ATOMS; CU FILM; CU FILMS; CU INTERCONNECTS; CUAL; DIFFUSION PATHS; ENERGY VALUES; HIGH-LATERAL RESOLUTION; LOWER DENSITY; NANO-SIMS; POSITRON ANNIHILATION; RE CRYSTALLIZATION; RELIABILITY; RELIABILITY IMPROVEMENT; STRESS MIGRATION; STRESS-INDUCED VOIDING; VACANCY-TYPE DEFECTS;

COPPER;

EID: 52149106672     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.04.004     Document Type: Article

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