A novel CVD-SiBCN low-K spacer technology for high-speed applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 108-109

  Ko, C H ^a   Kuan, T M ^a   Zhang, Kangzhan ^b   Tsai, Gino ^b   Seutter, Sean M ^b   Wu, C H ^a   Wang, T J ^a   Ye, C N ^a   Chen, H W ^a   Ge, C H ^a   Wu, K H ^a   Lee, W C ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SILICON; SPEED;

HIGH-SPEED APPLICATIONS; SPACER TECHNOLOGY; SPEED ENHANCEMENTS; VLSI TECHNOLOGIES;

TECHNOLOGY;

EID: 51949084504     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588581     Document Type: Conference Paper

References (4)

1. M. Togo et al., VLSI Tech. Dig. pp. 38, June. 1996.
2. C.H. Ko et al., VLSI-TSA-Tech pp. 25, April. 2005
3. T. Mizuno et al., IEEE TED., vol.39, pp.982, 1992.
4. J.C. Guo et al., IEEE TED., vol.41, pp.1239, 1994.