The As-Si (Arsenic-Silicon) system

Bulletin of Alloy Phase Diagrams

Volumn 6, Issue 3, 1985, Pages 254-258

  Olesinski, R W ^a   Abbaschian, G J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 51849184044     PISSN: 01970216     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02880410     Document Type: Article

References (34)

1. Silicon Arsenide
2. Segregation of Impurities During the Growth of Germanium and Silicon Crystals
3. Equilibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. I.
4. Impurity Centers in Ge and Si
5. Crystal Structure Data for B-Element Phases
6. Theoretical Calculation of Distribution Coefficients of Impurities in Germanium and Silicon, Heats of Solid Solution
7. Germanium and Silicon Liquidus Curves
8. Solid Solubilities of Impurity Elements in Germanium and Silicon
9. The Crystal Structure of SiAs
10. Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si
11. The Crystal Structures of SiP2, SiAs2, and GeP
12. Preparation and Properties of Pyrite-Type SiP2 and SiAs2
13. Doping of Epitaxial Silicon
14. Excess Free Energies in the Ge, Si and Ga Binary Systems—the α-Parameter Approach
15. Arsenic Source Vapor Pressure Kinetics and Capsule Diffusion
16. Effect of Complex Formation on Diffusion of Arsenic in Silicon
17. Determination of Henry's Constants in the Crystallization from the Gas Phase of Epitaxial Silicon Layers Alloyed with Phosphorus and Arsenic
18. Formation and Thermal Dissociation of SiAs2
19. Calculation of the Liquidus Isotherms and Component Activities in the Ga−As−Si and Ga−P−Si Ternary Systems
20. The Behavior of Arsenic in Silicon During Heat Treatment
21. Investigation of the p-T-x diagram of the Si−As System
22. The Diffusion of Ion-Implanted Arsenic in Silicon
23. Arsenic Diffusion into Silicon from Elemental Source
24. Investigation of Laser Induced Diffusion and Annealing Processes of Arsenic-Implanted Silicon Crystals
25. Calculation of the Activities of the Components of Liquid Me−Si Alloys from the Phase Diagrams
26. Kinetics of Lateral Autodoping in Silicon Epitaxy
27. Dose Dependence in the Laser Annealing of Arsenic-Implanted Silicon
28. Calculation of the Activity Coefficient of Arsenic in Single Crystal Silicon
29. Solid Solubility of As in Si as Determined by Ion Implantation and CW Laser Annealing
30. Modeling Laser-Induced Diffusion of Implanted Arsenic in Silicon
31. Supersaturated Substitutional Alloys Formed by Ion Implantation and Pulsed Laser Annealing of Group-III and Group-V Dopants in Silicon
32. Comparison of Solubility Limits and Electrical Activities for Antimony and Arsenic Ion Implanted Silicon