Stable atom-scale junctions on silicon fabricated by kinetically controlled electrochemical deposition and dissolution

ACS Nano

Volumn 2, Issue 8, 2008, Pages 1581-1588

  Shi, Ping ^a   Bohn, Paul W ^a  

^a University of Notre Dame   (United States)

Author keywords

Atom scale junction; Electrodeposition; Electrodissolution; Metal nanowire; Nanofabrication

Indexed keywords

ADSORPTION; ATOMIC PHYSICS; ATOMS; DISSOLUTION; ELECTRIC WIRE; GOLD; HEAT CONDUCTION; METALLIZING; NONMETALS; OPTICAL DESIGN; REDUCTION; SILICON;

ATOM-SCALE JUNCTION; ATOM-SCALE JUNCTIONS; ELECTRO-CHEMICAL DEPOSITION; ELECTRODISSOLUTION; METAL NANOWIRE; MOLECULAR ADSORPTION; NANOFABRICATION;

ELECTRODEPOSITION;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTROPLATING INDUSTRY; KINETICS; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTROPLATING; KINETICS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 51849166970     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn8002955     Document Type: Article

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