Schottky barriers on silicon nanowires influenced by charge configuration

Journal of Applied Physics

Volumn 104, Issue 5, 2008, Pages

  Piscator, J ^a   Engstrom O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; METALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OPTICAL DESIGN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; WALLS (STRUCTURAL PARTITIONS); WIRE;

METAL-SEMICONDUCTOR INTERFACES; NANOWIRE DEVICES; POSITIVE CHARGES; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY-BARRIER HEIGHT; SILICON NANOWIRES; SIMPLE MODELING;

ELECTRIC WIRE;

EID: 51849153245     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976316     Document Type: Article

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