Low-temperature annealing combined with laser crystallization for polycrystalline silicon TFTs on polymeric substrate

Journal of the Electrochemical Society

Volumn 155, Issue 10, 2008, Pages

  Privitera, V ^a   Scalese, S ^a   La Magna, A ^a   Pecora, A ^b   Cuscun M ^b   Maiolo, L ^b   Minotti, A ^b   Simeone, D ^b   Mariucci, L ^b   Fortunato, G ^b   Caristia, L ^c   Mangano, F ^c   Di Marco, S ^c   Camalleri, M ^c   Ravesi, S ^c   Coffa, S ^c   Grimaldi, M G ^d   De Bastiani, R ^d   Badal P ^d   Bagiante, S ^d  

^a CNR IMM   (Italy)

^b CNR   (Italy)

^c STMICROELECTRONICS   (Italy)

^d UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; GAS LASERS; GRAIN GROWTH; HYDROGEN; LASERS; NANOCRYSTALLINE ALLOYS; NONMETALS; OPTICAL DESIGN; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMERS; POLYSILICON; SILICON; STRUCTURAL ANALYSIS; SUBSTRATES; THIN FILM TRANSISTORS;

BENEFICIAL EFFECTS; CRYSTALLIZATION CONDITIONS; CRYSTALLIZATION PROCESSES; ELASTIC RECOIL DETECTION ANALYSIS; ELECTRICAL CHARACTERISTICS; EXCIMER-LASER ANNEALING; FIELD-EFFECT MOBILITIES; FLEXIBLE PLASTIC SUBSTRATES; GRAIN SIZES; IR ANALYSIS; LASER CRYSTALLIZATION; LOW TEMPERATURES; LOW-TEMPERATURE ANNEALING; LOW-TEMPERATURE THERMAL ANNEALING; ON/OFF RATIOS; POLY-CRYSTALLINE SILICON; POLY-SILICON THIN-FILM TRANSISTORS; POLYCRYSTALLINE-SI; POLYIMIDE SUBSTRATES; POLYMERIC SUBSTRATES; PROCESS THROUGHPUT; PROCESSING TEMPERATURES; SELF-ALIGNED; SUPER-LATERAL GROWTH; VOID-FREE;

ANNEALING;

EID: 51849104183     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2965734     Document Type: Article

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