Simulation and experimental analysis of planarization of refractory metals using a multi-step sputter/sputter etch process

Journal of Electronic Materials

Volumn 23, Issue 11, 1994, Pages 1215-1220

  Li, P ^a   Smy, T ^a   Dew, S K ^b   Brett, M J ^b  

^a CARLETON UNIVERSITY   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Magnetron sputter deposition; radio frequency sputter etching; refractory metals

Indexed keywords

EID: 51649134350     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02649972     Document Type: Article

References (15)

1. Significant improvement in step coverage using bias sputtered aluminum
2. Planarization by radio-frequency bias sputtering of aluminum as studied experimentally and by computer simulation
3. Topographical limitations to the metallization of very large scale integrated structures by bias sputtering: Experiments and computer simulations
4. Modeling bias sputter planarization of metal films using a ballistic deposition simulation
5. Simulation of the microstructure of chemical vapor deposited refractory thin films