The role of thermal treatment on the optical properties of Ge0.15Se0.85 system

Renewable Energy

Volumn 34, Issue 1, 2009, Pages 71-74

  Alnajjar, Abdalla Abdelaziz ^a  

^a UNIVERSITY OF SHARJAH   (United Arab Emirates)

Author keywords

Dielectric constant; Energy gap; Extinction coefficient; Ge Se system; Refractive index

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS FILMS; ATOMIC ABSORPTION SPECTROMETRY; ENERGY GAP; FILM PREPARATION; PERMITTIVITY; REFRACTIVE INDEX; THERMAL EVAPORATION;

AMORPHOUS STRUCTURES; ANNEALING TEMPERATURES; ATOMIC ABSORPTION SPECTROSCOPY; EXTINCTION COEFFICIENTS; PHOTOVOLTAIC DEVICES; REAL AND IMAGINARY; THERMAL EVAPORATION TECHNIQUE; THIN AMORPHOUS FILMS;

HEAT TREATMENT;

ALLOY; ATOMIC ABSORPTION SPECTROSCOPY; DIELECTRIC PROPERTY; EVAPORATION; EXTINCTION COEFFICIENT; GERMANIUM; QUARTZ; REFRACTIVE INDEX; SELENIUM; X-RAY DIFFRACTION;

EID: 51649089281     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2008.03.025     Document Type: Article

References (15)

1. Elliott S. Adv Phys 36 (1987) 135
2. Thoge N., Yamamto Y., Minami T., and Tanaka M. Appl Phys Lett 34 (1979) 640
3. Mao Z., Chen H., and Jung-Al L. J Appl Phys 78 (1995) 2338
4. Mehra R., Ganjoo A., Kaur G., and Mathur P. J Thermal Anal 45 (1995) 405
5. VI. J Ovonic Res 1 No. 5 (2005) 51-58
6. Bakr N. Condensation process and physical properties of GeSe In,Cd thin films prepared by semi-closed space technique. J Mater Processing Technol 132 (2003) 138-142
7. Kolobov A., Oyanagi H., Tanaks K., and Tanaka K. J Non-Cryst Sol 198 (1996) 732
8. Hayashi K., Kato D., and Shimakawa K. J Non-Cryst Sol 198 (1996) 696
9. 100-x. Pramana-J Phys 63 (2004) 617-625
10. 1-x thin films prepare by semi-closed space technique. Egypt J Sol 23 (2000) 45-57
11. x thin films. Egypt J Sol 28 (2005) 255-262
12. Mott N., and Davis E. Electronic processes in non-crystalline materials (1979), Oxford University Press, Oxford
13. Nedeva Y., Petkova T., Mytilineou E., and Petkov P. J. Optoelectronics Adv Mater 3 (2001) 433
14. Kannewure C., and Cashman R. J Phys Chem Solids 22 (1961) 293
15. Alias M. Optoelectronic study of a-Si-Ge-Al (As): H thin films. Ph.D. Thesis, University of Baghdad, Iraq; 1998.