Sub-picosecond time-domain measurement of heterojunction bipolar transistors and photodiodes

IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics

Volumn , Issue , 2006, Pages 510-

  Beck, A ^a   Lampin, J F ^a   Zaknoune, M ^a   Desplanque, L ^a   Mollot, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; ELECTROMAGNETIC WAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; PHOTODIODES; PHOTOEXCITATION; PROTON IRRADIATION; TIME DOMAIN ANALYSIS; TRANSISTORS;

INTERNATIONAL CONFERENCES; TERAHERTZ ELECTRONICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 51449103278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIMW.2006.368718     Document Type: Conference Paper

References (3)

1. H. Ito, T. Furuta, S. Kodama and T. Ishibashi, "InP/InGaAs unitravelling-carrier photodiode with 310 GHz Bandwidth", Electronics Lett., vol. 36, pp. 1809-1810, October 2000.
2. W. Hafez and M. Feng, "Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz", Appl. Phys. Lett., vol. 86, 152101, April 2005.
3. L. Desplanque, J.-F. Lampin and F. Mollot, "Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs AlGaAs", Appl Phys. Lett., vol. 84, pp. 2049-2051, March 2004.