Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum wells on GaAs(111)B substrate and their temperature-dependent photoluminescence (Nanotechnology (2008) 18, (105302))

Nanotechnology

Volumn 19, Issue 40, 2008, Pages

  Yang, Lin ^a   Motohisa, Junichi ^a   Takeda, Junichiro ^a   Tomioka, Katsuhiro ^a   Fukui, Takashi ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ERRATUM; ERROR; PRIORITY JOURNAL;

EID: 51349145592     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/40/409801     Document Type: Erratum

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