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Volumn 91, Issue 9, 2008, Pages 3098-3100

Edge-defined, film-fed growth (EFG) technique for the preparation of α-Al2O3:C crystal with highly sensitive thermoluminescence response

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH;

EID: 51149120384     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02561.x     Document Type: Article
Times cited : (6)

References (14)
  • 1
    • 0016998453 scopus 로고
    • The Thermoluminescence Behavior of LiF (TLD-100) for Doses up to 10 Mrad
    • S. Charalambous C. Petridou The Thermoluminescence Behavior of LiF (TLD-100) for Doses up to 10 Mrad Nucl. Instrum. Methods, 137, 441 4 (1976).
    • (1976) Nucl. Instrum. Methods , vol.137 , pp. 441-4
    • Charalambous, S.1    Petridou, C.2
  • 2
    • 0032083688 scopus 로고    scopus 로고
    • 2: Tm (TLD-300) as a Thermoluminescence One Hit Detector
    • 2: Tm (TLD-300) as a Thermoluminescence One Hit Detector Radiat. Meas., 29, 383 9 (1998).
    • (1998) Radiat. Meas. , vol.29 , pp. 383-9
    • Olko, P.1
  • 9
    • 0000096751 scopus 로고
    • Growth of Controlled Profile Crystals from the Melt: Part α-Edge-Defined, Film-Fed Growth (EFG)
    • H. E. Labelle Growth of Controlled Profile Crystals from the Melt: Part α-Edge-Defined, Film-Fed Growth (EFG) Mater. Res. Bull., 6, 581 (1971).
    • (1971) Mater. Res. Bull. , vol.6 , pp. 581
    • Labelle, H.E.1
  • 10
    • 26544442660 scopus 로고
    • Luminescence of the F-Center in Sapphire
    • K. H. Lee J. H. Crawford Luminescence of the F-Center in Sapphire Phys. Rev. B, 19, 3217 (1979).
    • (1979) Phys. Rev. B , vol.19 , pp. 3217
    • Lee, K.H.1    Crawford, J.H.2
  • 14
    • 33646157714 scopus 로고    scopus 로고
    • Decarbonization and Decolorization of Sapphire Crystals Grown by the Temperature Gradient Technique
    • Xu Jun, Zhou Guoqing Deng Peizheng Decarbonization and Decolorization of Sapphire Crystals Grown by the Temperature Gradient Technique Chin. J. Semicond., 27, 245 (2006).
    • (2006) Chin. J. Semicond. , vol.27 , pp. 245
    • Jun, X.1    Guoqing, Z.2    Peizheng, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.