SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

Journal of the Ceramic Society of Japan

Volumn 116, Issue 1357, 2008, Pages 960-964

  Akashi, Takaya ^a   Kasajima, Miho ^a   Kiyono, Hajime ^a   Shimada, Shiro ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Diffusion; Isotope; Oxidation; Silica; Silicon carbide; SIMS; Water

Indexed keywords

ARGON; DIFFUSION; GAS MIXTURES; GASES; ISOTOPES; MOLECULES; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON CARBIDE; SILICON OXIDES; SINGLE CRYSTALS; WATER; WATER VAPOR;

CARBONACEOUS SPECIES; DIFFUSING SPECIES; HIGH TEMPERATURE; OUTWARD DIFFUSION; OXIDATION TIME; RATE-CONTROLLING STEPS; SIC SINGLE CRYSTALS; WATER MOLECULE;

PHASE INTERFACES;

EID: 51149113325     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.116.960     Document Type: Article

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