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Volumn , Issue , 2008, Pages 1018-1045

Compact thermal model for phase change memory nanodevices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS ENGINEERING; FORMING; THERMOMECHANICAL TREATMENT;

EID: 50949123643     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITHERM.2008.4544377     Document Type: Conference Paper
Times cited : (15)

References (12)
  • 1
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    • S. Lai, "Current Status of Phase Change Memory and Its Future," Proc. IEDM, p.255, Dec. 2003. Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International.
  • 2
    • 35748985544 scopus 로고    scopus 로고
    • Phase-change materials for rewriteable data storage
    • M. Wuttig, N.Yamada, "Phase-change materials for rewriteable data storage," Nature Materials, vol 6, p.824, 2007.
    • (2007) Nature Materials , vol.6 , pp. 824
    • Wuttig, M.1    Yamada, N.2
  • 3
    • 50949086224 scopus 로고    scopus 로고
    • Pirovano et al. Scaling analysis of Phase Change Memory Technology, IEDM Tech. Dig., 29.6, 2003.
    • Pirovano et al. "Scaling analysis of Phase Change Memory Technology", IEDM Tech. Dig., 29.6, 2003.
  • 4
    • 50949125112 scopus 로고    scopus 로고
    • Multiphysics Modeling and Impact of Thermal Boundary Resistance in Phase Change Memory Devices
    • J. Reifenberg, et al., "Multiphysics Modeling and Impact of Thermal Boundary Resistance in Phase Change Memory Devices," IEEE, 2006.
    • (2006) IEEE
    • Reifenberg, J.1
  • 5
    • 50949133889 scopus 로고    scopus 로고
    • Simulation studies on electrical, thermal, and phase-change behavior of GeSbTe based memory cells
    • C. Wright, et al., "Simulation studies on electrical, thermal, and phase-change behavior of GeSbTe based memory cells". Phase Change and Ovonics Symposium, 2003.
    • (2003) Phase Change and Ovonics Symposium
    • Wright, C.1
  • 7
    • 38549155193 scopus 로고    scopus 로고
    • Thermal stress model for Phase Change Random Access Memory
    • vols
    • S. Kim et al., "Thermal stress model for Phase Change Random Access Memory," Solid State Phenomena vols 124-126, p. 37-40, 2007.
    • (2007) Solid State Phenomena , vol.124-126 , pp. 37-40
    • Kim, S.1
  • 8
    • 22944490207 scopus 로고    scopus 로고
    • Thermal characterization and analysis of phase change random access memory
    • V. Giraud, et al., "Thermal characterization and analysis of phase change random access memory, " Journal of Applied Physics vol 98, 2005.
    • (2005) Journal of Applied Physics , vol.98
    • Giraud, V.1
  • 9
    • 34547873605 scopus 로고    scopus 로고
    • Temperature Dependence of the Thermal properties of Optical Memory Materials
    • June
    • M. Kuwahara, et al., "Temperature Dependence of the Thermal properties of Optical Memory Materials," Japanese Journal of Applied Physics, Vol. 46 No. 6B, 2007, pp. 3909-3911, June 2007.
    • (2007) Japanese Journal of Applied Physics , vol.46 , Issue.6 B , pp. 3909-3911
    • Kuwahara, M.1
  • 10
    • 2942652803 scopus 로고    scopus 로고
    • Thermal analysis of nonvolatile and non rotation phase change memory cell
    • Materials Research Society
    • L. Shi,et al., "Thermal analysis of nonvolatile and non rotation phase change memory cell," Materials Research Society Symposium Proceedings, vol. 803, Materials Research Society, 2004.
    • (2004) Materials Research Society Symposium Proceedings , vol.803
    • Shi, L.1
  • 11
    • 31544440445 scopus 로고    scopus 로고
    • Electronic Properties of Amorphous and Crystalline GST
    • T. Kato and K. Tanaka, "Electronic Properties of Amorphous and Crystalline GST," Japanese Journal of Applied Physics, Vol 44, No 10, 2005, p. 7340-7344.
    • (2005) Japanese Journal of Applied Physics , vol.44 , Issue.10 , pp. 7340-7344
    • Kato, T.1    Tanaka, K.2
  • 12
    • 50949125393 scopus 로고    scopus 로고
    • Hitachi Global. Hitachi and Renesas Technology Develop Low-Power MOS Phase-Change Memory Cells for On-Chip Memory of Microcontrollers. 13 December 2005. http://www.hitachi.com/New/cnews/051213.html
    • Hitachi Global. "Hitachi and Renesas Technology Develop Low-Power MOS Phase-Change Memory Cells for On-Chip Memory of Microcontrollers." 13 December 2005. http://www.hitachi.com/New/cnews/051213.html


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.