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Volumn 53, Issue 2, 2008, Pages 685-690

H segregation by adatoms on hydrogen-terminated semiconductor surfaces

Author keywords

Adatom; H segregation; H terminated surface; Surfactant

Indexed keywords


EID: 50949110826     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.685     Document Type: Article
Times cited : (1)

References (26)
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    • Surf. Sci. 520, 7 (2002).
    • (2002) Surf. Sci , vol.520 , pp. 7
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    • Phys. Rev. B 58, 12958 (1998).
    • (1998) Phys. Rev. B , vol.58 , pp. 12958
  • 16
  • 24
    • 0003754095 scopus 로고
    • edited by P. Ziesche and H. Eschrig Academie Verlag, Berlin
    • J. P. Perdew, Electronic Structure of Solids '91, edited by P. Ziesche and H. Eschrig (Academie Verlag, Berlin, 1991).
    • (1991) Electronic Structure of Solids '91
    • Perdew, J.P.1
  • 25
    • 50949128102 scopus 로고    scopus 로고
    • Though Sc (4s23d1) has only one electron in the 3d state, it is strongly adsorbed on the H/Si(111) surface, which is expressed by creation of an unpaired electron by electron transition for 4s → 3d in adsorption, i.e, 4s23d1 → 4s 13d2. The calculated energy difference between the 4s and the 3d orbitals is only 0.7 eV, which means that the transition can easily occur in adsorption
    • 2. The calculated energy difference between the 4s and the 3d orbitals is only 0.7 eV, which means that the transition can easily occur in adsorption.
  • 26
    • 50949115290 scopus 로고    scopus 로고
    • The binding energy of Cl-H is larger than that of Si-H by 0.82 eV.
    • The binding energy of Cl-H is larger than that of Si-H by 0.82 eV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.