Estimating Kapitza resistance between Si-SiO2 interface using molecular dynamics simulations

2008 11th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, I-THERM

Volumn , Issue , 2008, Pages 1055-1062

  Mahajan, Sanket S ^a   Subbarayan, Ganesh ^a   Sammakia, Bahgat G ^b  

^a PURDUE UNIVERSITY   (United States)

^b BINGHAMTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS ENGINEERING; FIGHTER AIRCRAFT; FORMING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICON; SILICON COMPOUNDS; THERMOMECHANICAL TREATMENT;

CRITICAL APPLICATIONS; ELECTRONIC SYSTEMS; SEMICONDUCTOR INDUSTRIES; SILICON-ON-INSULATOR DEVICES;

SEMICONDUCTING SILICON;

EID: 50949094057     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITHERM.2008.4544379     Document Type: Conference Paper

References (39)

1. A. Korkin, J. C. Greer, G. Bersuker, V. Karasiev, and R. J. Bartlett, Phys. Rev. B 73, 165312 (2006).
2. H. P. Wong, D. J. Frank, P. M. Solomon, C. H. J. Wann, and J. J. Welser, Proc. IEEE 87, 537 (1999).
3. L. T. Su, J. E. Chung, D. A. Antoniadis, K. E. Goodson, and M. I. Flik, IEEE TED 41, 69 (1994).
4. B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, Q. Xiang, T. King, et al., Proc. IEEE IEDM p. 251 (2002).
5. E. Pop, R. Dutton, and K. Goodson, Proc. IEEE IEDM p. 883 (2003).
6. P. L. Kapitza, J. Phys. USSR 4, 181 (1941).
7. E. T. Swartz and R. O. Pohl, Rev. Mod. Phys. 61, 605 (1989).
8. D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, Appl. Phys. Rev. 93, 793 (2003).
9. M. P. Allen and D. J. Tildesley, Computer Simulation of Liquids (Oxford, 2002).
10. D. Frenkel and B. Smit, Understanding Molecular Simulation: From Algorithms to Applications (Academic Press, 2002).
11. M. S. Green, J. Chem. Phys. 22, 398 (1954).
12. R. Kubo, M. Yokota, and S. Nakajima, J. Phys. Soc. of Japan 12, 1203 (1957).
13. P. K. Schelling, S. R. Phillpot, and P. Keblinski, Phys. Rev. B 65, 144306 (2002).
14. F. Müller-Plathe, J. Chem. Phys. 106, 6082 (1997).
15. D. Bedrov and G. D. Smith, J. Chem. Phys. 113, 8080 (2000).
16. S. S. Mahajan, G. Subbarayan, and B. G. Sammakia, Phys. Rev. E 76, 056701 (2007).
17. P. K. Schelling, S. R. Phillpot, and P. Keblinski, J. Appl. Phys. 95, 6082 (2004).
18. A. Maiti, G. D. Mahan, and S. T. Pantelides, Solid State Commun. 102, 517 (1997).
19. H. Zhong and J. R. Lukes, Phys. Rev. B 74, 125403 (2006).
20. S. Shenogin, L. Xue, R. Ozisik, P. Keblinski, and D. G. Cahill, J. Appl. Phys. 95, 8136 (2004).
21. H. A. Patel, S. Garde, and P. Keblinski, Nano Lett. 5, 2225 (2005).
22. W. E. Pickett, J. L. Feldman, and J. Deppe, Modelling Simul. Mater. Sci. Eng. 4, 409 (1996).
23. M. Matsumoto, H. Wakabayashi, and T. Makino, Heat Trans. Asian Res. 34, 135 (2005).
24. F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985).
25. R. Biswas and D. R. Hamann, Phys. Rev. B 36, 6434 (1987).
26. J. Terso., Phys. Rev. B 37, 6991 (1988).
27. B. W. H. van Beest, G. J. Kramer, and R. A. van Santen, Phys. Rev. Lett. 64, 1955 (1990).
28. S. Tsuneyuki, M. Tsukada, H. Aoki, and Y. Matsui, Phys. Rev. Lett. 61, 869 (1988).
29. P. Vashishta, R. K. Kalia, J. P. Rino, and I. Ebbsjo, Phys. Rev. B 41, 12197 (1990).
30. Z. Jiang and R. A. Brown, Phys. Rev. Lett. 74, 2046 (1995).
31. T. Watanabe, H. Fujiwara, H. Noguchi, T. Hoshino, and I. Ohdomari, Jpn. J. Appl. Phys. 38, L366 (1999).
32. T. Watanabe and I. Ohdomari, Thin Solid Films 343-344, 370 (1999).
33. T. Watanabe and I. Ohdomari, Appl. Surf. Sci. 162-163, 116 (2000).
34. H. Ohta and S. Hamaguchi, J. Chem. Phys. 115, 6679 (2001).
35. H. Watanabe, K. Kato, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura, and K. Terakura, Phys. Rev. Lett. 80, 345 (1998).
36. H. C. Andersen, J. Chem. Phys. 72, 2384 (1980).
37. H. J. C. Berendsen, J. P. M. Postma, W. F. van Gunsteren, A. DiNola, and J. R. Haak, J. Chem. Phys. 81, 3684 (1984).
38. M. Zhang, E. Lussetti, L. E. S. de Souza, and F. Müller-Plathe, J. Phys. Chem. B 109, 15060 (2005).
39. C. Hu, M. Kiene, and P. S. Ho, Appl. Phys. Lett. 79, 4121 (2001).