MOS characteristics of Ta-Mo alloy electrodes on a ZrO2 gate dielectric

Journal of the Korean Physical Society

Volumn 53, Issue 2, 2008, Pages 709-712

  Hong, Shin Nam ^a   Son, Ki Min ^a   An, Jae Hong ^a   Kang, Young Sub ^b  

^a Hankuk Aviation University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Co sputtering; EOT; Gate metal; Molybdenum; Tantalum; Work function

Indexed keywords

EID: 50949086228     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.709     Document Type: Article

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