1 MeV electron irradiation influence on GaAs solar cell performance

Solar Energy Materials and Solar Cells

Volumn 92, Issue 11, 2008, Pages 1336-1340

  Danilchenko, B ^a   Budnyk, A ^a   Shpinar, L ^a   Poplavskyy, D ^a   Zelensky, S E ^a,b   Barnham, K W J ^c   Ekins Daukes, N J ^c  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

GaAs; Point defects; Radiation effects; Solar cells

Indexed keywords

DIRECT ENERGY CONVERSION; GALLIUM ALLOYS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

EXPERIMENTAL STUDIES; FLUENCE; GAAS; MEV ELECTRONS; POINT DEFECTS; RADIATION EFFECTS; RADIATION-RESISTANCE; ROOM TEMPERATURES; SOLAR CELL PERFORMANCE;

ELECTRON IRRADIATION;

EID: 50549092679     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.05.006     Document Type: Article

References (21)

1. Green M.A., Emery K., King D.L., Igari S., and Warta W. Solar cell efficiency tables (version 28). Progr. Photovoltaics: Res. Appl. 14 (2006) 455
2. Ekins-Daukes N.J., Barnham K.W.J., Connolly J.P., Roberts J.S., Clark J.C., Hill G., and Mazzer M. Strain-balanced GaAsP/InGaAs quantum well solar cells. Appl. Phys. Lett. 75 (1999) 4195
3. Lion J.J., and Wong W.W. Comparison and optimization of the performance of Si and AsGa solar cells. Solar Energy Mater. Solar Cells 28 (1992) 9
4. Torchynska T.V., and Polupan G.P. III-V material solar cells for space applications. Quant. Electron. Optoelectron. 5 (2002) 63
5. Xianbi X., Wenhui D., Chang, and Xianbo L. Electron irradiation and thermal annealing effect on GaAs solar cells. Solar Energy Mater. Solar Cells 55 (1998) 313
6. Holmes-Siedle A., and Adams L. Handbook of Radiation Effects. second ed. (2002), Oxford University Press, Oxford
7. Walters R.J., Messenger S.R., Cotal H.L., Summers G.P., and Burke E.A. Electron and proton irradiation-induced degradation of epitaxial InP solar cells. Solid-State Electron. 39 (1996) 797
8. Botnaryuk V.M., and Gorchak L.V. Photoelectric parameter degradation in hetero photo converters under electron radiation. Heliotechnics 1 (1990) 6
9. Loo R.Y., Kamth G.S., and Sheng S.L. Radiation damage and annealing in GaAs solar cells. IEEE Trans. Electron. Dev. 37 (1990) 485
10. Yamaguchi M., and Amano C. Numerical analysis for radiation-resistant GaAs heteroface solar cell structures. J. Appl. Phys. 57 (1985) 537
11. Bourgoin J.C., and Zazoui M. Irradiation-induced degradation in solar cells: characterization of recombination centers. Semicond. Sci. Technol. 17 (2002) 453
12. Maguire J., Newman R.C., and Beal R.B. Site switching of silicon in neutron-irradiation and annealed arsenid by vacancy migration. J. Phys. C.: Sol. State Phys. 19 (1986) 1897
13. Landsberg P.T. An introduction to the theory of photovoltaic cells. Solid-State Electron. 18 (1975) 1043
14. Rosenzweig W., Gummel H.K., and Smits F.M. Solar cell degradation under 1 MeV electron bombardment. Bell Syst. Tech. J. 42 (1963) 399
15. Fahrenbruch A.L., and Bube R.H. Fundamentals of Solar Cells. Photovoltaic Energy Conversion (1983), Academic Press, New York
16. Hill D.E. The shape parameter of donor band tails in gallium arsenide. Phys. Rev. 133 (1964) A866
17. Makham S., Zazoui M., Sun G., and Bourgoin J. Prediction of proton-induced degradation of GaAs space solar cells. Solar Energy Mater. Solar Cells 90 (2006) 1513
18. Hadrami M., Roubi L., Zazoui M., and Bourgoin J.C. Relation between solar cell parameters and space degradation. Solar Energy Mater. Solar Cells 90 (2006) 1486
19. Pons D., and Bourgoin J.C. Irradiation-induced defects in GaAs. J. Phys. C: Solid State Phys. 18 (1985) 3571
20. Stievenard D., Boddaert X., and Bourgoin J.C. Irradiation-induced defects in p-type GaAs. Phys. Rev. B 34 (1986) 4048
21. Brudnyi V.N., and Peshev V.V. Temperature dependence of centers introduction. Phys. Stat. Sol. (a) 118 1 (1990) 219