Electrochemical investigation of the influence of thin SiOx films deposited on gold on charge transfer characteristics

Electrochimica Acta

Volumn 53, Issue 27, 2008, Pages 7908-7914

  Szunerits, Sabine ^a,c   Kirchner, Carolina Nunes ^b   Wittstock, Gunther ^b   Boukherroub, Rabah ^c   Gondran, Chantal ^d  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b UNIVERSITY OF OLDENBURG   (Germany)

^c INSTITUT D ELECTRONIQUE   (France)

^d UNIVERSITÉ JOSEPH FOURIER   (France)

Author keywords

Gold silicon composite films; Impedance; Plasma enhanced chemical vapor deposition (PECVD); Scanning electrochemical microscopy (SECM); Silicon dioxide

Indexed keywords

GOLD; NONMETALS; SILICA; SILICON COMPOUNDS;

ELECTROCHEMICAL BEHAVIORS; GOLD-SILICON COMPOSITE FILMS; IMPEDANCE; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SCANNING ELECTROCHEMICAL MICROSCOPY (SECM); SILICON DIOXIDE; SILICON DIOXIDES; THIN GOLD FILMS;

ELECTROCHEMICAL ELECTRODES;

EID: 50349085705     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2008.05.070     Document Type: Article

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