Yield prediction techniques based on DFM rules and criticality for 65nm technology and beyond

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn , Issue , 2007, Pages 128-131

  Kojima, Tsutomu ^a   Kyou, S ^a   Murakami, H ^a   Honda, K ^a   Nakayama, T ^a   Matsuoka, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; CRITICALITY (NUCLEAR FISSION); DEGRADATION; ELECTRIC CONDUCTIVITY; EXTRACTION; LAWS AND LEGISLATION; OPTICAL ENGINEERING; SEMICONDUCTOR MATERIALS; SULFATE MINERALS;

65NM TECHNOLOGY; DESIGN FOR MANUFACTURING; DESIGN RULES; DEVICE DEGRADATION; INTERNATIONAL SYMPOSIUM; LAYOUT DESIGNS; PROCESS MARGINS; SEMICONDUCTOR MANUFACTURING; YIELD DEGRADATION; YIELD PREDICTIONS;

PROCESS ENGINEERING;

EID: 50249187648     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.2007.4446785     Document Type: Conference Paper

References (1)

1. K. Honda, et al, VLSI Symp., p13, 2004.