Simple self-aligned air-gap interconnect process with Cu/FSG structure

Proceedings of the IEEE 2003 International Interconnect Technology Conference, IITC 2003

Volumn , Issue , 2003, Pages 68-70

  Noguchi, J ^a   Fujiwara, T ^a   Sato, K ^a   Nakamura, T ^a   Kubo, M ^a   Uno, S ^a   Ishikawa, K ^a   Saito, T ^a   Konishi, N ^a   Yamada, Y ^a   Tamaru, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

Air gaps; Capacitance; Chemicals; CMOS process; CMOS technology; Delamination; Delay; Dielectric constant; Large scale integration; Silicon carbide

Indexed keywords

CAPACITANCE; CHEMICALS; CMOS INTEGRATED CIRCUITS; DELAMINATION; DRY ETCHING; LSI CIRCUITS; PERMITTIVITY; SILICON CARBIDE;

AIR-GAPS; CAPACITANCE REDUCTION; CMOS PROCESSS; CMOS TECHNOLOGY; CU INTERCONNECT; DELAY; DRY ETCHING PROCESS; EFFECTIVE DIELECTRIC CONSTANTS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 50249185700     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2003.1219715     Document Type: Conference Paper

References (4)

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3. V.Arnal, et al., Proceedings of IITC 2001, p298.
4. O.Demolliens, et al.. Proceedings of IITC 2000, p276.