Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 543-546

  Sivasubramani, P ^a   Kirsch, P D ^a   Huang, J ^a   Park, C ^a   Tan, Y N ^a   Gilmer, D C ^a   Young, C ^a   Freeman, K ^a   Hussain, M M ^a   Harris, R ^c   Song, S C ^a   Heh, D ^a   Choi, R ^a   Majhi, Cp ^d   Bersuker, G ^a   Lysaght, P ^a   Lee, B H ^a   Tseng, H H ^a   Jur, I J S ^e   Lichtenwalner, D J ^e   Kingon, A I ^e   Jammy, R ^b   more..

^a SEMATECH   (United States)

^b IBM   (United States)

^c AMD ^*

^d INTEL CORPORATION   (United States)

^e North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GATES (TRANSISTOR);

EQUIVALENT-OXIDE THICKNESS; EXCELLENT PERFORMANCE; HIGH-K GATE DIELECTRICS; HIGH-TEMPERATURE STABILITY;

GATE DIELECTRICS;

EID: 50249184597     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418995     Document Type: Conference Paper

References (13)

1. G. D. Wilk, R. M. Wallace and J. M. Anthony J. Appl. Phys. 89, p. 5243 (2001).
2. X. Yu, C. Zhu, M. Yu, M. F. Li, A. Chin, C. H. Tung, D. Gui, and D.-L. Kwong IEDM Tech Dig. p. 31 (2005).
3. T. Ma et al. IEEE Trans. Electron Dev. 48, p. 2348 (2001).
4. M. Li, Z. Zhang, S. A. Campbell, W. L. Gladfelter, M. P. Agustin, D. O. Klenov, S. Stemmer J. Appl. Phys. 98 p. 054506 (2005).
5. D. Triyoso et al. Proc. AVS-ALD (2005).
6. N. Lu, H.-J. Li, M. Gardner, S. Wickramanayaka, D.-L. Kwong IEEE Electron Dev. Lett. 26 p. 298 (2005).
7. S. J. Rhee et al. IEDM Tech Dig. p. 837 (2004).
8. J. Robertson J. Vac. Sci & Tech.B 18 p.1785 (2000).
9. P. D. Kirsch et al. J. Appl. Phys. 99 p. 023508 (2006).
10. M. A. Quevedo et al. IEDM Tech Dig. p. 437 (2005).
11. S. Datta et al. IEDM Tech Dig. p. 653 (2003).
12. H. AlShareef et al. Symp. VLSI Tech. p. 10 (2006).
13. J. Li and T.-P. Ma J. Appl. Phys. 62, p.4212 (1987).