A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

25th Norchip Conference, NORCHIP

Volumn , Issue , 2007, Pages

  Cijvat, Ellie ^a   Tom, Kevin ^b   Faulkner, Mike ^b   Sjöland, Henrik ^a  

^a LUND UNIVERSITY   (Sweden)

^b VICTORIA UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; ELECTRIC CURRENTS; GALLIUM ALLOYS; GALLIUM NITRIDE; MODULATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

DRAIN EFFICIENCY; DRAIN VOLTAGES; GAN-HEMT; GATE BIAS VOLTAGE; GATE BIASES; LOW FREQUENCIES; OUTPUT POWERS; PASSIVE COMPONENTS; PHASE SIGNALS; PULSE WIDTH; SIGNAL COMBINATION; SIMULATION AND MEASUREMENT; SUPPLY VOLTAGES;

DRAIN CURRENT;

EID: 50249184500     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NORCHP.2007.4481050     Document Type: Conference Paper

References (10)

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