Si/SiGe epitaxy: A ubiquitous process for advanced electronics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 689-692

  Dutartre, D ^a   Loubet, N ^a   Brossard, F ^a   Vandelle, B ^a   Chevalier, P ^a   Chantre, A ^a   Monfray, S ^a   Fenouillet Beranger, C ^b   Pouydebasque, A ^a   Skotnicki, T ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON DEVICES; EPITAXIAL GROWTH; METALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; THICK FILMS;

FABRICATION OF THIN FILMS; INNOVATIVE STRUCTURES; LOW TEMPERATURE EPITAXY; NANO SCALING; PROCESS CAPABILITIES; SELECTIVE EPITAXY; SI-GE ALLOYS; SIGE MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50249176499     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419039     Document Type: Conference Paper

References (12)

1. D. Dutartre, F. Deleglise, C. Fellous, L. Rubaldo and A. Talbot, Si Heterostructure Handbook, J.D. Cressler, 2006.
2. F. Sato, T. Hashimoto, T. Tasumi, H. Kitahata and T. Tashiro, IEDM Tech. Dig., 1992.
3. F.Brossard, B. Vandelle, P. Chevalier and D. Dutartre ISTDM proceedings, Princeton, 2006.
4. P. Chevalier et al, SiRF 07, Long Beach, USA, 2007.
5. N. Zerounian, F. Aniel, B. Barbalat, P. Chevalier and A. Chantre, Electronics Letters, 43, 14, 2007.
6. CS.H.Lee et al., IEDM Tech. Dig., 2004.
7. C. Fenouillet et al., IEDM Tech. Dig., 2007.
8. M.Jurczak et al., IEEE-TED, vol. 47, p. 2179, 2000.
9. D.Dutartre, A. Talbot, N. Loubet, ECS, Cancun, 2006.
10. S. Monfray et al., IEDM Tech. Dig., 2007.
11. N.Loubet, T. Kormann, G. Chabanne, S. Denorme and D. Dutartre, ICSI-5 proceedings , Marseille, France, 2007.
12. A. Pouydebasque et al., Si Nanoelectronics workshop, Japan, 2007.