Development of monitoring technology of ion implanter for particle detection

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Volumn , Issue , 2006, Pages 106-109

  Yasuda, Satoshi ^a   Imai, Shin Ichi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PLASMA INTERACTIONS; ELECTRIC CONDUCTIVITY; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; MAGNETIC DOMAINS; MAGNETIC FLUX; SEMICONDUCTOR MATERIALS; TECHNOLOGY; TRAJECTORIES;

ELECTRODE POSITIONING; EQUIPMENT MONITORING; IN-SITU; INTERNATIONAL SYMPOSIUM; ION BEAM TRAJECTORIES; ION IMPLANTERS; MAGNETIC FLUX DENSITIES; MASS ANALYZERS; MONITORING TECHNOLOGIES; PARAMETER DATA; PARTICLE COUNTERS; PARTICLE DETECTION; PARTICLE GENERATIONS; ROOT CAUSES; SEMICONDUCTOR MANUFACTURING;

IONS;

EID: 50249175109     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSM.2006.4493035     Document Type: Conference Paper

References (1)

1. O.Diop and Sean Blain, "Reducing Yield Impact at Ion Implant Process due to Particles using In Situ Particle Measurement at Sub 0.13u Geometrices", ISSM2005, on 13-15 Sept. 2005, pp 381-385.