Effect of molecular packing on field-effect performance of single crystals of thienyl-substituted pyrenes

Chemistry of Materials

Volumn 20, Issue 15, 2008, Pages 4883-4890

  Ashizawa, Minoru ^a,d   Yamada, Koichi ^b   Fukaya, Atsuko ^a   Kato, Reizo ^a   Hara, Kouji ^c   Takeya, Jun ^c  

^a RIKEN   (Japan)

^b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CHEMICAL BONDS; CHLORINE COMPOUNDS; CRYSTALLOGRAPHY; CRYSTALS; ISOMERS; MOLECULAR ORBITALS; POWDERS; PYRENE; QUANTUM CHEMISTRY; SINGLE CRYSTALS; TRANSISTORS; WAVE FUNCTIONS;

ISOFORMS; MOLECULAR PACKINGS; OVERLAP INTEGRALS; PHYSICAL VAPOR TRANSPORT; PYRENE DERIVATIVES; RE CRYSTALLIZATION; SUZUKI COUPLING REACTIONS; THIENYL;

FIELD EFFECT TRANSISTORS;

EID: 50249170408     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm703499q     Document Type: Article

References (39)

1. (a) Dimitrakopoulos, C. D.; Mascara, D. J. Adv. Mater. 2002, 14, 99.
2. (b) Garnier, F.; Hajlaoui, R.; Yassar, A.; Srivastava, P. Science 1994, 265, 1684.
3. (c) Bao, Z. Adv. Mater. 2000, 12, 227.
4. (d) Horowitz, G. J. Mater. Chem. 1999, 9, 2021.
5. (e) Horowitz, G. Adv. Mater. 1998, 70, 365.
6. (f) In Thin-Film Transistors; Kagan, C. R., Andry, P., Eds.; Marcel Dekker: New York, 2003; p 377.
7. (g) Briseno, A. L.; Tseng, R. J.; Ling, M.-M.; Falcao, E. H. L.; Yang, Y.; Wudl, F.; Bao, Z. Adv. Mater. 2006, 18, 2320.
8. (a) Facchetti, A.; Mushrush, M.; Katz, H. E.; Marks, T. J. Adv. Mater. 2003, 15, 33.
9. (b) Malanfant, P. R. L.; Dimitrakopoulos, C. D.; Gelorme, J. D.; Kosbar, L. L.; Graham, T. O. Appl. Phys. Lett. 2002, 80, 2517.
10. (c) Babel, A.; Jenekhe, S. A. Adv. Mater. 2002, 145, 371.
11. (d) Facchetti, A.; Deng, Y.; Wang, A.; Koide, Y.; Sirringhaus, H.; Marks, T. J.; Friend, R. H. Angew. Chem., Int. Ed. 2000, 39, 4547.
12. (e) Facchetti, A.; Wang, A.; Marks, T. J.; Sirringhaus, H.; Deng, Y.; Friend, R. H. Polym. Mater. Sci. Eng. 2000, 83, 290.
13. (f) Katz, H. E.; Johnson, J.; Lovinger, A. J.; Li, W. J. Am. Chem. Soc. 2000, 122, 7787.
14. (a) Katz, H. E. Chem. Mater. 2004, 16, 4748.
15. (b) Takimiya, K.; Kunugi, Y.; Toyoshima, Y.; Otsubo, T. J. Am. Chem. Soc. 2005, 127, 3605.
16. (c) Takimiya, K.; Kunugi, Y.; Konda, Y.; Ebata, H.; Toyoshima, Y.; Otsubo, T. J. Am. Chem. Soc. 2006, 128, 3044.
17. (d) Merlo, J. A.; Newman, C. R.; Gerlach, C. P.; Kelley, T. W.; Muyres, D. V.; Fritz, S. E.; Toney, M. F.; Frisbie, C. D. J. Am. Chem. Soc. 2005, 127, 3997.
18. (e) Parkin, S. R.; Anthony, J. E.; Kuo, C.-C.; Jackson, T. N. J. Am. Chem. Soc. 2005, 127, 4986.
19. (f) Xiao, K.; Liu, Y.; Qi, T.; Zhang, W.; Wang, F.; Gao, J.; Qiu, W.; Ma, Y.; Cui, G.; Chen, S.; Zhan, X.; Yu, G.; Qin, J.; Hu, W.; Zhu, D. J. Am. Chem. Soc. 2005, 127, 13281.
20. (g) Ando, S.; Murakami, R.; Nishida, J. -I.; Tada, H.; Inoue, Y.; Tokito, S.; Yamashita, Y. J. Am. Chem. Soc. 2005, 127, 14996.
21. Lin, Y. Y.; Gundlach, D. J.; Nelson, S. F.; Jackson, T. N. IEEE Electron Device Lett. 1997, 18, 87.
22. Halik, M.; Klauk, H.; Zschieschang, U.; Schmid, G.; Ponomarenko, S.; Kirchmeyer, S. Weber, W. Adv. Mater. 2003, 15, 917.
23. (a) Sundar, V. C.; Zaumseil, J.; Podzorov, V.; Menard, E.; Willett, R. L.; Someya, T.; Gershenson, M. E.; Rogers, J. Science 2004, 303, 1644.
24. (b) Takeya, J.; Yamagishi, M.; Tominari, Y.; Hirahara, R.; Nakazawa, Y.; Nishikawa, T.; Kawase, T.; Shimoda, T.; Ogawa, S. Appl. Phys. Lett. 2007, 90, 102120.
25. (c) Jurchescu, O. D.; Popinciuc, M.; van Wees, B. J.; Palstra, T. T. M. Adv. Mater. 2007, 19, 688.
26. Oyamada, T.; Uchiuzou, H.; Oku, Y.; Shimoji, N.; Matsushige, K.; Sasabe, H.; Adachi, C. J. Appl. Phys. 2005, 98, 074506-1.
27. Zhang, H.; Wang, Y.; Shao, K.; Liu, Y.; Chen, S.; Qiu, W.; Sun, X.; Qi, T.; Ma, Y.; Yu, G.; Su, Z.; Zhu, D. Chem. Commun. 2006, 755.
28. Vollmann, H.; Becker, H.; Correll, M.; Streeck, H. Justus Liebigs Ann. Chem. 1937, 531, 1.
29. (a) Grimshaw, J.; Trocha-Grimshaw, J. J. Chem. Soc., Perkin 1972, 1, 1622.
30. (b) Minabe, M.; Takeshige, S.; Soeda, Y.; Kimura, T.; Tsubota, M. Bull. Chem. Soc. Jpn. 1994, 67, 172.
31. (a) Podzorov, V.; Pudalov, V. M.; Gershenson, M. E. Appl. Phys. Lett. 2003, 82, 1739.
32. (b) Takeya, J.; Goldmann, C.; Haas, S.; Pernstich, K. P.; Ketterer, B.; Batllogg, B. J. Appl. Phys. 2003, 94, 5800.
33. (c) de Boer, R. W. I.; Klapwijk, T. M.; Morpurgo, A. F. Appl. Phys. Lett. 2003, 83, 4345.
34. (d) Yamada, K.; Takeya, J.; Shigeto, K.; Tsukagoshi, K.; Aoyagi, Y.; Iwasa, Y. Appl. Phys. Lett. 2006, 88, 122110.
35. Kloc, Ch.; Simpkins, P. G.; Siegrist, T.; Laudise, A. J. Cryst. Growth 1997, 182, 416.
36. Mori, T.; Kobayashi, A.; Sasaki, Y.; Kobayashi, H.; Saito, G.; Inokuchi, H. Bull. Chem. Soc. Jpn. 1984, 57, 627.
37. Mattheus, C. C.; Dros, A. B.; Baas, J.; Meetsma, A.; Boer Jan, L.; de; Palstra, T. T. M. Acta Crystallogr. 2001, C57, 939.
38. (a) Takeya, J.; Tsukagoshi, K.; Aoyagi, Y.; Takenobu, T.; Iwasa, Y. Jpn. J. Appl. Phys. 2005, 46, L1393.
39. (b) Podzorov, V.; Menard, E.; Rogers, J. A.; Gershenson, M. E. Phys. Rev. Lett. 2005, 95, 226601.