Reliability issues and scaling projections for phase change non volatile memories

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 157-160

  Lacaita, A L ^b   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; DATA STORAGE EQUIPMENT; ELECTRON DEVICES; NANOCRYSTALLINE ALLOYS; PULSE CODE MODULATION; SEMICONDUCTOR DEVICE MANUFACTURE; STABILITY; TECHNOLOGY;

AMORPHOUS CHALCOGENIDE; AMORPHOUS STRUCTURES; AMORPHOUS VOLUMES; CHALCOGENIDE; COMPOSITION CHANGES; NON-VOLATILE MEMORIES; PCM TECHNOLOGY; PHASE CHANGES; PHASE-CHANGE MEMORY TECHNOLOGY; RELAXATION MECHANISMS; RELIABILITY PROPERTIES; SCALING LIMITS; SEMICONDUCTOR INDUSTRIES; STRUCTURAL STABILITIES;

PHASE CHANGE MEMORY;

EID: 50249155395     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418890     Document Type: Conference Paper

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