Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1216-1220

  Jeong, Jae Seong ^a   Jung, Jin Kyu ^a   Park, Sang Deuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIRCRAFT SIGNAL LIGHTS; DEGRADATION; OPTICAL PROPERTIES; QUALITY ASSURANCE; RELIABILITY; SAFETY FACTOR; SULFATE MINERALS; TESTING;

ACCELERATED LIFE TESTING; ACCELERATION FACTOR; END USERS; EXTERNAL NOISE; FRONT DISPLAY; INGAN LED; LEAKAGE PROBLEMS; MASS-PRODUCTION; ON CURRENTS; OPERATING CURRENTS; POTENTIAL FIELDS; RELIABILITY IMPROVEMENT; STRESS FACTORS; WHITE LED;

FAILURE ANALYSIS;

EID: 50249139721     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.029     Document Type: Article

References (6)

1. High-Brightness LED Market Review and Forecast 2007, Published: Strategies Unlimited 2007.
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3. Jeong J.-S., Lee J.-H., Ha J.-S., and Park S.-D. Stress mechanism about field lightning surge of high voltage BJT based line driver for ADSL system. Microelectron Reliab J 45 (2005) 1398-1401
4. Jeong J.-S., Hong S.-H., and Park S.-D. Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules. Microelectron Reliab J 47 (2007) 1795-1799
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