Flexible, simplified CMOS on Si(110) with metal gate / high κ for HP and LSTP

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 57-60

  Harris, H R ^a   Thompson, S E ^b   Krishnan, S ^a   Kirsch, P ^a   Majhi, P ^a   Smith, C E ^a   Hussain, M M ^a   Sun, G ^b   Adhikari, H ^a   Suthram, S ^b   Lee, B H ^a   Tseng, H H ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; ELECTRON DEVICES; METALS;

CMOS DEVICES; CMOS ON SI; DEVICE PERFORMANCES; METAL GATES; MINORITY CARRIERS; OUTPUT CHARACTERISTICS; PROCESS COMPLEXITY; SI(110); SOURCE/DRAIN EXTENSION; STRESS ENHANCEMENT; VELOCITY SATURATION;

SILICON;

EID: 50249133188     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418862     Document Type: Conference Paper

References (11)

1. M. Yang, et al, IEDM 2003.
2. S. Krishnan, et al, IEDM 2006.
3. K. Uchido, et al, IEDM 2006.
4. M. Yang, et al, TED 53, 2006.
5. S. Takagi, et al, TED 41, 1994; M. Mischetti, PRB 44, 1991
6. L. Chang, et al, TED 51, 2004.
7. H. C.-W. Wang, et al, IEDM 2006.
8. M. Yang, et al, EDL 24, 2003.
9. A. Teramoto, et al, TED 54, 2007.
10. M.H. na, et al, IEDM 2002.
11. Q. Chen, et al, NSTI Nanotech, 2006.