High carrier density and capacitance in TiO2 nanotube arrays induced by electrochemical doping

Journal of the American Chemical Society

Volumn 130, Issue 34, 2008, Pages 11312-11316

  Fabregat Santiago, Francisco ^a   Barea, Eva M ^a   Bisquert, Juan ^a   Mor, Gopal K ^b   Shankar, Karthik ^b   Grimes, Craig A ^b  

^a UNIVERSITAT JAUME I   (Spain)

^b The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CONDUCTING PROPERTIES;

NANOMATERIAL; NANOTUBE; TITANIUM DIOXIDE;

ARTICLE; COATED PARTICLE; ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; IMPEDANCE; MATERIAL COATING; MOLECULAR INTERACTION; PARTICLE SIZE; SUPERCONDUCTOR; THICKNESS;

EID: 50249098784     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja710899q     Document Type: Article

References (29)

1. O'Regan, B.; Grätzel, M. Nature 1991, 353, 737.
2. Wang, Q.; Ito, S.; Grätzel, M.; Fabregat-Santiago, F.; Mora-Seró, I.; Bisquert, J.; Bosshoa, T.; Imaic, H. J. Phys. Chem. B 2006, 110, 19406.
3. Mora-Seró, I.; Fabregat-Santiago, F.; Denier, B.; Bisquert, J.; Tena-Zaera, R.; Elias, J.; Lévy-Clement, C. Appl. Phys. Lett. 2006, 89, 203117.
4. Snaith, H. J.; Schmidt-Mende, L. Adv. Mater. 2007, 19, 3187.
5. Mor, G. K.; Shankar, K.; Paulose, M.; Varghese, O. K.; Grimes, C. A. Nano Lett. 2006, 6, 215.
6. Mor, G. K.; Varghese, O. K.; Paulose, M.; Shankar, K.; Grimes, C. A. Sol. Energy Mater. Sol. Cells 2006, 90, 2011.
7. Shankar, K.; Mor, G. K.; Prakasam, H. E.; Yoriya, S.; Paulose, M.; Varghese, O. K.; Grimes, C. A. Nanotechnology 2007, 18, 065707.
8. Enache-Pommer, E.; Boercker, J. E.; Aydil, E. S. Appl. Phys. Lett. 2007, 91, 123116.
9. Baxter, J. B.; Aydil, E. S. Appl. Phys. Lett. 2005, 86, 053114.
10. Martinson, A. B. F.; McGarrah, J. E.; Parpia, M. O. K.; Hupp, J. T. Phys. Chem. Chem. Phys. 2006, 8, 4655-4659.
11. Martinson, A. B. F.; Elam, J. W.; Hupp, J. T.: Pellin, M. J. Nano Lett. 2007, 7, 2183.
12. Bisquert, J. Phys. Chem. Chem. Phys. 2008, 10, 49.
13. Bisquert, J.; Fabregat-Santiago, F.; Mora-Seró, I.; Garcia-Belmonte, G.; Barea, E. M.; Palomares, E. Inorg. Chim. Acta 2008, 361, 684-698.
14. Kopidakis, N.; Benkstein, K. D.; van de Lagemaat, J.; Frank, A. J. J. Phys. Chem. B 2003, 107, 11307.
15. Bisquert, J.; Garcia-Belmonte, G.; Fabregat-Santiago, F.; Ferriols, N. S.; Bogdanoff, P.; Pereira, E. C. J. Phys. Chem. B 2000, 104, 2287.
16. Bisquert, J. J. Phys. Chem. B 2002, 106, 325.
17. Bisquert, J.; Zaban, A.; Greenshtein, M.; Mora-Seró, I. J. Am. Chem. Soc. 2004, 126, 13550.
18. Bisquert, J. Phys. Chem. Chem. Phys. 2003, 5, 5360.
19. Fabregat-Santiago, F.; Bisquert, J.; Garcia-Belmonte, G.; Boschloo, G.; Hagfeldt, A. Sol. Energy Mater. Sol. Cells 2005, 87, 117.
20. Bisquert, J. Phys. Chem. Chem. Phys. 2008, 10, 3175.
21. Winter, M.; Brodd, R. J. Chem. Rev. 2004, 104, 4245.
22. Lemon, B. I.; Hupp, J. T. J. Phys. Chem. 1996, 100, 14578.
23. Yan, S. G.; Hupp, J. T. J. Phys. Chem. 1996, 100, 2667.
24. Muñoz, A. G. Electrochim. Acta 2007, 52, 4167.
25. Fabregat-Santiago, F.; Mora-Seró, I.; Garcia-Belmonte, G.; Bisquert, J. J. Phys. Chem. B 2003, 107, 758.
26. Fabregat-Santiago, F.; Bisquert, J.; Palomares, E.; Otero, L.; Kuang, D.; Zakeeruddin, S. M.; Gratzel, M. J. Phys. Chem. C 2007, 111, 6550.
27. Sze, S. M. Physics of Semiconductor Devices, 2nd ed.; John Wiley and Sons: New York, 1981.
28. Wang, Q.; Zhang, Z.; Zakeeruddin, S. M.; Gratzel, M. J. Phys. Chem. C 2008, 112, 7084.
29. Chappel, S.; Grinis, L.; Ofir, A.; Zaban, A. J. Phys. Chem. B 2005, 109, 1643.