On the maximum permissible working voltage of commercial power silicon diodes and thyristors

IEEE International Symposium on Industrial Electronics

Volumn , Issue , 2007, Pages 401-406

  Obreja, Vasile V N ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHES (SNOWSLIDES); CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RECTIFIERS; ELECTRIC SWITCHGEAR; ELECTRONICS INDUSTRY; INDUSTRIAL ELECTRONICS; LEAKAGE CURRENTS; NONMETALS; OCCUPATIONAL RISKS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SNOW; TECHNICAL PRESENTATIONS; THYRISTORS;

AVALANCHE DEVICES; BLOCKING VOLTAGES; ELECTRICAL CHARACTERISTICS; HIGH VOLTAGES; INTERNATIONAL SYMPOSIUM; JUNCTION TEMPERATURES; LINEAR VARIATIONS; LOW POWERS; P-N JUNCTIONS; PULSED CURRENT; RECTIFIER DIODES; REVERSE VOLTAGES; RISK OF FAILURE; SHORT TIME; SILICON DIODES; STEADY-STATE OPERATIONS; VOLTAGE DEPENDENCE; WORKING VOLTAGES;

AVALANCHE DIODES;

EID: 50049131197     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2007.4374631     Document Type: Conference Paper

References (8)

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