Cu-Cu bonding alternative to solder based micro-bumping

Proceedings of the Electronic Packaging Technology Conference, EPTC

Volumn , Issue , 2007, Pages 315-318

  Ruythooren, Wouter ^a   Beltran, Amaia ^a   Labie, Riet ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER PLATING; DIAMONDS; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; ELECTROPLATING; TECHNOLOGY;

BONDED INTERFACES; BONDING TEMPERATURES; CU SURFACES; ELECTRICAL RESISTANCES; ELECTRICAL YIELD; HIGH YIELD; HIGH-STRENGTH; PACKAGING TECHNOLOGIES; SHEAR TESTING;

COPPER ALLOYS;

EID: 50049100659     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPTC.2007.4469706     Document Type: Conference Paper

References (6)

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5. B. Swinnen, W. Ruythooren, P. De Moor, L. Bogaerts, L. Carbonell, K. De Munck, B. Eyckens, S. Stoukatch, D. Sabuncuoglu Tezcan, Z. Tokei, J. Vaes, J. Van Aelst, E. Beyne, "3D integration by Cu-Cu thermo-compression bonding of extremely thinned bulk-Si die containing 10 μm pitch through-Si vias", IEDM 2006, San Fransisco, CA, 11-13 December 2006.
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