New bonding wire for fine pitch applications

Proceedings of the Electronic Packaging Technology Conference, EPTC

Volumn , Issue , 2007, Pages 750-754

  Milke, E ^a   Mueller, T ^a   Bischoff, A ^a  

^a WC Heraeus GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING ELEMENTS; CALCIUM; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONICS PACKAGING; GOLD; METALS; PRECIOUS METALS; TECHNOLOGY;

BONDABILITY; BONDING WIRES; BREAKING LOAD; DOPING ELEMENTS; ELECTRICAL CONDUCTIVITY; FINE PITCH; FUTURE APPLICATIONS; HIGH CONDUCTIVITY; HIGH ELECTRICAL CONDUCTIVITY; INHOMOGENEOUS DISTRIBUTION; LOW CONCENTRATIONS; NEW MATERIALS; PACKAGING TECHNOLOGIES; WIRE APPLICATIONS; WIRE DIAMETERS;

WIRE;

EID: 50049090339     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPTC.2007.4469731     Document Type: Conference Paper

References (7)

1. Hadar, I, et al., Thicker wire in fine pitch applications. Semicon 2002, Singapore.
2. Bischoff, A., Herklotz, G. and Schräpler, L., Recent developments in gold bonding wires for microelectronics. IPMI Conference 2001, Tucson.
3. ASTM 100 Barr, West Conshocken, Pensylvania 19428-2559.
4. Harman, G. G. "Wire Bonding in Microelectroncis" McGraw-Hill 1997, p. 67 ff.
5. MIL STD 883F, Microcircuits, Method 2011.7
6. th IEEE electronic Components Conference, San Francisco, 1976, pp. 92-97.
7. Shimada, W., Kondo, T., Sakane, H. Banjo, T., and Nakagawa, K., "Thermocompression bonding of Au-Al system in semiconductor IC assembly Process", Proc. Int. conf. On Soldering, Brazing, and Welding in Electronics", Munich, 1976, pp. 127-132.