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Physical Review Letters

Volumn 101, Issue 7, 2008, Pages

Finite-size Berezinskii-Kosterlitz-Thouless transition at grain boundaries in solid He4 and the role of He3 impurities

(4) Gaudio, Sergio a,b Cappelluti, Emmanuele a,b Rastelli, Gianluca c Pietronero, Luciano a,b

a UNIVERSITÀ DI ROMA LA SAPIENZA (Italy)

b INFM (Italy)

c UNIVERSITÉ JOSEPH FOURIER (France)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; HELIUM; SEMICONDUCTOR DOPING; TEMPERATURE;

AVERAGE SIZE; BEREZINSKII-KOSTERLITZ-THOULESS TRANSITION; DOPING DEPENDENCE; FINITE SIZE; FINITE SIZE EFFECT; LOW TEMPERATURES; NONCLASSICAL ROTATIONAL INERTIA; POWER LAW RELATION;

ELECTRON ENERGY ANALYZERS;

EID: 49749153398 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.075301 Document Type: Article

Times cited : (11)

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