Interface structure and transport of complex oxide junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1521-1525

  Nelson Cheeseman, B B ^a   Wong, F ^a   Chopdekar, R V ^a,b   Chi, M ^c,d   Arenholz, E ^e   Browning, N D ^c,d   Suzuki, Y ^a  

^a No 1760   (United States)

^b School of Chemical and Molecular Engineering   (United States)

^c Davis   (United States)

^d LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX OXIDES; EXCHANGE-COUPLING; HALF-METALLIC ELECTRODES; HIGH-CRYSTALLINE QUALITY; INTERFACE STRUCTURES; INTERFACIAL LAYER; LOW BACKGROUND; MAGNETIC SWITCHING; MAGNETIC TUNNEL JUNCTION; MAGNETIC TUNNEL JUNCTIONS; SPIN FILTERING; TRANSMISSION ELECTRON; TUNNEL BARRIERS;

CHLORINE COMPOUNDS; CRYSTALLOGRAPHY; ELECTRIC RESISTANCE; ELECTRODES; IRON OXIDES; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; METALLIZING; NICKEL; OXIDE MINERALS; OZONE WATER TREATMENT; PEROVSKITE; SEMICONDUCTOR JUNCTIONS; SPIN DYNAMICS; TRANSPORT PROPERTIES; TUNNELS; WAVE FILTERS; WAVEGUIDE JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 49749148742     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2956626     Document Type: Article

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