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Volumn , Issue , 2008, Pages 849-855

Layout level timing optimization by leveraging active area dependent mobility of strained-silicon devices

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREAS; BENCHMARK DESIGNS; CYCLE TIME; CYCLE TIME REDUCTION; DESIGN CLOSURE; DEVICE MODELLING; MOORE'S LAWS; MOSFETS; OPTIMIZATION ITERATIONS; PERFORMANCE IMPROVEMENTS; PROCESS CHARACTERIZATION; RESEARCH WORKS; SILICON DEVICES; STANDARD-CELL LIBRARIES; STRAINED SILICON; STRAINED SILICON DEVICES; SUB-100 NM TECHNOLOGIES; TIMING OPTIMIZATION;

EID: 49749144088     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DATE.2008.4484780     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
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    • x Source/Drain Technology for the 45-nm Technology Node and Beyond
    • July
    • x Source/Drain Technology for the 45-nm Technology Node and Beyond", IEEE Transactions on Electron Devices, Vol 53, No.7, July 2006. pp. 11647-1656
    • (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.7 , pp. 11647-11656
    • Eneman, G.1
  • 2
    • 33744723814 scopus 로고    scopus 로고
    • pMOSFET With 200% Mobility Enhancement Induced by Multiple Stressors
    • June
    • Washington, L. et al., "pMOSFET With 200% Mobility Enhancement Induced by Multiple Stressors" IEEE Electron Device Letters, Vol 27, No. 6, June 2006. pp. 511-513.
    • (2006) IEEE Electron Device Letters , vol.27 , Issue.6 , pp. 511-513
    • Washington, L.1
  • 3
    • 0036932273 scopus 로고    scopus 로고
    • Accurate Modeling of Trench Isolation Induced Mechanical Stress Effects on MOSFET Electrical Performance
    • Bianchi, R. A. et al., "Accurate Modeling of Trench Isolation Induced Mechanical Stress Effects on MOSFET Electrical Performance", International Electron Devices Meeting 2002, pp. 117-120
    • (2002) International Electron Devices Meeting , pp. 117-120
    • Bianchi, R.A.1
  • 4
    • 49749153568 scopus 로고    scopus 로고
    • Corporate Websites for AMD®, Intel® and IBM®
    • Corporate Websites for AMD®, Intel® and IBM®
  • 5
    • 0442311973 scopus 로고    scopus 로고
    • Electrical Analysis of External Mechanical Stress Effects in Short Channel MOSFETs on (0 0 1) Silicon
    • Gallon, C. et al., "Electrical Analysis of External Mechanical Stress Effects in Short Channel MOSFETs on (0 0 1) Silicon", Solid State Electronics, Volume 48, Issue 4. http://dx.doi.org/10.1016/j.sse.2003.09. 024 pp. 561-566
    • Solid State Electronics , vol.48 , Issue.4
    • Gallon, C.1
  • 6
    • 8344236776 scopus 로고    scopus 로고
    • A 90-nm Logic Technology Featuring Strained Silicon
    • Nov
    • Thompson, E. S. et al., "A 90-nm Logic Technology Featuring Strained Silicon", IEEE Transaction on Electron Devices, Vol 51, No 11, Nov 2004, pp. 1790-1797
    • (2004) IEEE Transaction on Electron Devices , vol.51 , Issue.11 , pp. 1790-1797
    • Thompson, E.S.1
  • 8
    • 49749110857 scopus 로고    scopus 로고
    • http://www.opencores.org


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.