Electrical and optical characterization of M-plane GaN films grown on LiAlO2 substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2548-2551

  Rivera, C ^a   Misra, P ^b,c   Pau, J L ^a   Munoz E ^a   Brandt, O ^b   Grahn, H T ^b   Ploog, K H ^b  

^a Polytechnic University of Madrid   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL AND OPTICAL PROPERTIES; GAN FILMS; M-PLANE; NITRIDE SEMICONDUCTORS; OPTICAL CHARACTERIZATIONS;

CRYSTALS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LITHIUM; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

ELECTRIC NETWORK ANALYSIS;

EID: 49749128390     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674841     Document Type: Conference Paper

References (9)

1. P. Waltereit et al., Nature 406, 865 (2000).
2. C. Rivera et al., Appl. Phys. Lett. 88, 213507 (2006).
3. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
4. Y. J. Sun et al., J. Appl. Phys. 92, 5714 (2002).
5. B. Rau et al., Appl. Phys. Lett. 77, 3343 (2000).
6. Y. J. Sun et al., Appl. Phys. Lett. 82, 3850 (2003).
7. P. Waltereit et al., J. Cryst. Growth 218, 143 (2000).
8. D. P. Feng, Y. Zhao, and G. Y. Zhang, phys. stat. sol. (a) 176, 1003 (1999).
9. H. Ishida et al., IEEE Trans. Electron Devices 53, 1524 (2006).