Modeling of NBTI-induced PMOS degradation under arbitrary dynamic temperature variation

Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008

Volumn , Issue , 2008, Pages 774-779

  Zhang, Bin ^a   Orshansky, Michael ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT PERFORMANCES; ELECTRONIC DESIGNS; HIGHLY SENSITIVE; INTERNATIONAL SYMPOSIUM; LARGE RANGE; MODEL BASED; NANO SCALING; NEGATIVE BIAS- TEMPERATURE-INSTABILITY; OPERATING TEMPERATURES; SIMPLIFIED ANALYSIS; TEMPERATURE MODELLING; TEMPERATURE PROFILING; TEMPERATURE VARIATIONS;

DEGRADATION; ELECTRONICS ENGINEERING; ELECTRONICS INDUSTRY; EXPERIMENTS; FIELD EFFECT TRANSISTORS; FORECASTING; INTEGRATED CIRCUITS; LIMITERS; NETWORKS (CIRCUITS); SULFATE MINERALS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

NEGATIVE TEMPERATURE COEFFICIENT;

EID: 49749105251     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2008.4479836     Document Type: Conference Paper

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