Removal of oxide films from silicon surfaces in a high vacuum system: an in situ ellipsometric study

Surface Science

Volumn 56, Issue C, 1976, Pages 472-481

  Hopper, M A ^a   Clarke, R A ^a   Young, L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49549130334     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(76)90468-4     Document Type: Article

References (24)

1. A Computer-Operated Following Ellipsometer
2. General Treatment of the Effect of Cell Windows in Ellipsometry
3. Surface Temperature by Ellipsometry
4. Stoichiometry of thin silicon oxide layers on silicon
5. Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
6. Influence of Oxide Layers on the Determination of the Optical Properties of Silicon
7. Oxidation of Si and GaAs in air at room temperature
8. Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study