A 120mm2 16Gb 4-MLC NAND flash memory with 43nm CMOS technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 51, Issue , 2008, Pages 430-625

  Kanda, Kazushige ^a   Koyanagi, Masaru ^a   Yamamura, Toshio ^a   Hosono, Koji ^a   Yoshihara, Masahiro ^a   Miwa, Toru ^b   Kato, Yosuke ^b   Mak, Alex ^c   Chan, Siu Lung ^c   Tsai, Frank ^c   Cernea, Raul ^c   Le, Binh ^c   Makino, Eiichi ^a   Taira, Takashi ^a   Otake, Hiroyuki ^a   Kajimura, Norifumi ^a   Fujimura, Susumu ^a   Takeuchi, Yoshiaki ^a   Itoh, Mikihiko ^a   Shirakawa, Masanobu ^a   Nakamura, Dai ^a   Suzuki, Yuya ^a   Okukawa, Yuki ^a   Kojima, Masatsugu ^a   Yoneya, Kazuhide ^a   Arizono, Takamichi ^a   Hisada, Toshiki ^a   Miyamoto, Shinji ^a   Noguchi, Mitsuhiro ^a   Yaegashi, Toshitake ^a   Higashitani, Masaaki ^c   Ito, Fumitoshi ^b   Kamei, Teruhiko ^b   Hemink, Gertjan ^b   Maruyama, Tooru ^a   Ino, Kazumi ^a   Ohshima, Shigeo ^a   more..

^a TOSHIBA CORPORATION   (Japan)

^b SanDisk Corporation   (United States)

^c SanDisk   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MEMORY ARCHITECTURE; NAND CIRCUITS;

CMOS TECHNOLOGY; CONTROL GATES; MEMORY CELL ARRAYS; MICRO-SD MEMORY CARDS; NAND FLASH MEMORY; NAND STRINGS; POWER BUS;

FLASH MEMORY;

EID: 49549124776     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523241     Document Type: Conference Paper

References (4)

1. M. Dusa, A. Engelen, J. Finders et al., "An Integrated Lithography Concept with Application on 45nm 1/2 Pitch Flash Memory Devices" Optical Microlithography XIX. Proceedings of the SPIE, vol. 6154, pp. 217-228, 2006.
2. 2 8Gb NAND Flash Memory with 70nm CMOS Technology," ISSCC Dig. Tech. Papers, pp. 44-45, Feb. 2005.
3. 2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput," ISSCC Dig. Tech. Papers, pp. 507-508, Feb. 2006.
4. J.-D. Lee, C.-K. Lee, M.-W. Lee et al., "A New Programming Disturbance Phenomenon in NAND Flash Memory by Source/Drain Hot-Electrons Generated by GIDL Current" Non-Volatile Semicoductor Memory Workshop, pp. 31-33, Feb. 2006.