A 400μW 4.7-to-6.4GHz VCO under an above-IC inductor in 45nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 51, Issue , 2008, Pages

  Borremans, J ^a,b   Wambacq, P ^a,b   Kuijk, M ^b   Carchon, G ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

METALS;

AREA REDUCTION; BULK CMOS; FULLY INTEGRATED; INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE; METAL LAYERS;

VARIABLE FREQUENCY OSCILLATORS;

EID: 49549118965     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523294     Document Type: Conference Paper

References (3)

1. G. J. Carchon, W. De Raedt, E. Beyne, "Wafer-Level Packaging Technology for High-Q On-Chip Inductor and Transmission Lines", IEEE Trans. Microwave Theory and Techniques, vol. 52, April 2004.
2. N. Nastos, Y. Papananos, "RF Operation of MOSFETs Under Integrated Inductors", IEEE Trans. Microwave Theory and Techniques, vol. 54, May 2006.
3. F. Zang, P. R. Kinget, "Design of Components and Circuits Underneath Integrated Inductors", IEEE J. Solid State Circuits, vol. 41, Oct. 2006.