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Volumn , Issue , 2008, Pages 474-479

Design rule optimization of regular layout for leakage reduction in nanoscale design

Author keywords

[No Author keywords available]

Indexed keywords

65NM TECHNOLOGY; ACTIVE POWER; AREA PENALTY; DESIGN AUTOMATION CONFERENCE; DESIGN RULES; LEAKAGE REDUCTION; NANO-SCALE DESIGN; SOUTH PACIFIC; SUB-WAVELENGTH; SYSTEMATIC PROCEDURE;

EID: 49549107717     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASPDAC.2008.4483997     Document Type: Conference Paper
Times cited : (11)

References (15)
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  • 4
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    • International technology roadmap for semiconductors 2006, http://public.itrs.net
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  • 5
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    • Layout impact of resolution enhancement techniques: Impediment or opportunity?
    • L. W. Liebmann, "Layout impact of resolution enhancement techniques: impediment or opportunity?," ISPD, pp.110-117, 2003.
    • (2003) ISPD , pp. 110-117
    • Liebmann, L.W.1
  • 6
    • 4444224690 scopus 로고    scopus 로고
    • Toward a methodology for manufacturability-driven design rule exploration
    • L. Capodieci, P. Gupta, A. B. Kahng, D. Sylvester and J. Yang, "Toward a methodology for manufacturability-driven design rule exploration," IEEE/ACM DAC, pp. 311-316, 2004.
    • (2004) IEEE/ACM DAC , pp. 311-316
    • Capodieci, L.1    Gupta, P.2    Kahng, A.B.3    Sylvester, D.4    Yang, J.5
  • 7
    • 0346778720 scopus 로고    scopus 로고
    • Manufacturing aware physical design
    • P. Gupta and A. B. Kahng, "Manufacturing aware physical design," IEEE/ACM ICCAD, pp. 681-687, 2003.
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    • Gupta, P.1    Kahng, A.B.2
  • 8
    • 0242693873 scopus 로고    scopus 로고
    • Lithography driven layout of logic cells for 65nm node
    • D. Pramanik, M.Cote, "Lithography driven layout of logic cells for 65nm node," SPIE, Vol. 5042, pp 126-134, 2003.
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    • Pramanik, D.1    Cote, M.2
  • 9
    • 34548858419 scopus 로고    scopus 로고
    • Towards a new nanoelectronic cosmology
    • J. Hartmann., "Towards a new nanoelectronic cosmology," ISSCC, pp. 31-37, 2007.
    • (2007) ISSCC , pp. 31-37
    • Hartmann, J.1
  • 10
    • 33751087554 scopus 로고    scopus 로고
    • D. G. Flagello and B. Arnold, Optical lithography for nanotechnology, SPIE, 6327, pp. 63270D, 2006.F. M. Schellenberg, L. Capodieci, Impact of RET on physical design, ISPD, pp. 52-55, 2001.
    • D. G. Flagello and B. Arnold, "Optical lithography for nanotechnology," SPIE, Vol. 6327, pp. 63270D, 2006.F. M. Schellenberg, L. Capodieci, "Impact of RET on physical design," ISPD, pp. 52-55, 2001.
  • 11
    • 28744452518 scopus 로고    scopus 로고
    • Design for manufacturing strategies to bring silicon process to 32nm node
    • J. Fung Chen, "Design for manufacturing strategies to bring silicon process to 32nm node," IEEE ISSM, pp. 101-104, 2005.
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  • 12
    • 49549118844 scopus 로고    scopus 로고
    • Extending aggressive low-k1 design rule requirements for 90 and 65 nm nodes via simultaneous optimization of numerical aperture, illumination and optical proximity correction
    • S. Roy, D. Van, D. Broeke, "Extending aggressive low-k1 design rule requirements for 90 and 65 nm nodes via simultaneous optimization of numerical aperture, illumination and optical proximity correction," SPIE, Vol. 4, pp. 023003, 2005.
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    • Roy, S.1    Van, D.2    Broeke, D.3
  • 13
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    • Impact of RET on physical design
    • F. M. Schellenberg, L. Capodieci, "Impact of RET on physical design," ISPD, pp. 52-55, 2001.
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    • Schellenberg, F.M.1    Capodieci, L.2
  • 14
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    • Understanding the forbidden pitch phenomenon and assist feature placement
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  • 15
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    • RADAR: RET-aware detailed routing using fast lithography simulations
    • J. Mitra, P. Yu, D. Z. Pan, "RADAR: RET-aware detailed routing using fast lithography simulations," IEEE/ ACM DAC, pp 369-372, 2005.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.