Digital detection of oxide breakdown and life-time extension in submicron CMOS technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 51, Issue , 2008, Pages 530-633

  Acar, Mustafa ^a   Annema, Anne Johan ^a   Nauta, Bram ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

NETWORKS (CIRCUITS); SOLID STATE DEVICES;

90-NM CMOS; BREAKDOWN DETECTION; DIGITAL DETECTIONS; HIGH VOLTAGE; LIFE-TIMES; OXIDE BREAKDOWN; SUB-MICRON CMOS TECHNOLOGY; THIN OXIDES;

CMOS INTEGRATED CIRCUITS;

EID: 49549097632     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523291     Document Type: Conference Paper

References (3)

1. B. Kaczer, et al., "Impact of MOSFET Gate Oxide Breakdown on Digital Circuit Operation and Reliability", IEEE Trans. Electron Devices, pp. 500-506, May 2002.
2. L. Larcher, et al., "Oxide Breakdown after RF Stress: Experimental Analysis and Effects On Power Amplifier Operation", IEEE IRPS, pp. 283-288, Mar. 2006.
3. S. M. Rezaul Hasan, "A High Efficiency 3GHz 24-dBm CMOS Linear Power Amplifier for RF Application", IWSOC'05, pp. 503-507, July 2005.