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Volumn 112, Issue 30, 2008, Pages 11569-11574

Effect of doping anions' structures on poly(3,4-ethylenedioxythiophene) as hole conductors in solid-state dye-sensitized solar cells

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; DIRECT ENERGY CONVERSION; NEGATIVE IONS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

EID: 49449093961     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp801878a     Document Type: Article
Times cited : (31)

References (38)
  • 38
    • 49449095966 scopus 로고    scopus 로고
    • At present, we believe that HOMO/LUMO levels of different doped PEDOTs show very similar values. It is widely accepted that Voc of the devices is determined by the difference between the quasi-Fermi level of TiO2 and the HOMO level of PEDOT. However, the interface properties would result in different Vocʼs of the devices because the conditions of interfaces change the electron density, that is, the quasi-Fermi level of TiO2. As discussed in the paper, the doped anion with the longest alkyl chain (N(C4F9SO2) 2, or C8F9SO3 , would change the growth speed of PEDOT and integrated charges during in situ photoelectrochemical polymerization processes, which would greatly change the conditions of the interface between PEDOT and dye molecules
    • -) would change the growth speed of PEDOT and integrated charges during in situ photoelectrochemical polymerization processes, which would greatly change the conditions of the interface between PEDOT and dye molecules.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.