An impact of multi-layered structures of modern optoelectronic devices on their thermal properties

Optical and Quantum Electronics

Volumn 40, Issue 2-4, 2008, Pages 205-216

  Gȩsikowska, Elzbieta ^a   Nakwaski, Włodzimierz ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Phonon propagation; Phonon scattering; Thermal conductivity of superlattices; Thermal properties of nanostructures

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; BULK VALUES; COMPOSITION CHANGES; ELECTRONIC DEVICES; HEAT EXTRACTIONS; HEAT TRANSPORT; LAYER BOUNDARIES; MULTI-LAYERED; MULTI-LAYERED STRUCTURES; NANOSCALE THERMAL TRANSPORT; PHONON PROPAGATION; PHONON SCATTERING; THERMAL CONDUCTIVITY OF SUPERLATTICES; THERMAL PROPERTIES; THERMAL PROPERTIES OF NANOSTRUCTURES; THIN SEMICONDUCTOR;

ALUMINUM ARSENIDE; BOLTZMANN EQUATION; CARBON FIBER REINFORCED PLASTICS; EXTRACTION; GALLIUM ALLOYS; OPTOELECTRONIC DEVICES; PHONONS; SEMICONDUCTING GALLIUM; THERMAL INSULATING MATERIALS; THERMODYNAMIC PROPERTIES; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 49449087747     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-007-9151-z     Document Type: Article

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