A comparative study of Si doping in GaAs layers grown by molecular beam epitaxy on GaAs(110) and GaAs(001) surfaces

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7372-7375

  Zhou, T C ^a   Zhou, X C ^a   Kirk, W P ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4944239700     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365437     Document Type: Article

References (10)

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