An improved approach for two-level microstructure fabrication

Electrochemical and Solid-State Letters

Volumn 7, Issue 9, 2004, Pages

  Wang, Ying ^a   Zhu, Changchun ^a   Li, Ying ^b   Wu, Chunyu ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICES; SILICA; SILICON WAFERS; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION; TRANSPORT PROPERTIES;

ISOTROPIC ETCHING TECHNOLOGY; KINETIC RESISTANCE; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); TWO-LEVEL MICROSTRUCTURES;

MICROSTRUCTURE;

EID: 4944229234     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1784052     Document Type: Article

References (7)

1. O. Yamada, M. Watanabe, H. Kakigi, T. Koga, Y. Takahashi, and H. Kirihata, in The 2nd International Symposium on Power Semiconductor Devices and ICs, p. 256 (1990).
2. T. Nakagawa, F. Tokunoh, Y. Yamauchi, M. Yamamoto, and K. Niinobu, in The 4th International Symposium on Power Semiconductor Devices and ICs, p. 180 (1992).
3. J. Voboril, U.S. Pat. 4,911,783 (1990).
4. K. R. Williams and R. S. Muller, J. Microelectromech. Syst., 5, 256 (1996).
5. M. S. Kulkarni and H. F. Erk, J. Electrochem. Soc., 147, 176 (2000).
6. M. S. Kulkarni, J. Libbert, S. Keltner, and L. Mulétagno, J. Electrochem. Soc., 149, G153 (2002).
7. V. E. Van, K. Sato, M. Shikida, A. J. Nijdam, and S. J. Van, Sens. Actuators, A, 93, 232 (2001).